BGH BL3209S Manual De Servicio página 35

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Publicidad

5
( DDR1 DRAM With Termination )
DDRV
MEM_DQ0
D
MEM_DQ1
MEM_DQ2
MEM_DQ3
MEM_DQ4
MEM_DQ5
MEM_DQ6
MEM_DQ7
MEM_DQS0
MEM_DQM0
MEM_WE#
MEM_CAS#
MEM_RAS#
MEM_CS#
MEM_BA0
MEM_BA1
MEM_ADDR10
MEM_ADDR0
MEM_ADDR1
MEM_ADDR2
MEM_ADDR3
C
DDRV
+
+
CD5
CD5
+
+
220uF/16v-LowESR CAP
220uF/16v-LowESR CAP
增加CD6
20080911
B
If use sdram CD34 CD26 CD27 RD9 CD28 CD29 CD30 UD2 NC
If use ddr CD34 CD26 CD27 RD9 CD28 CD29 CD30 UD2 ON
A
5
4
DDRV
U1
U1
1
66
VDD
VSS
MEM_DQ15
2
65
DQ0
DQ15
3
64
VDDQ
VSSQ
MEM_DQ14
4
63
DQ1
DQ14
MEM_DQ13
5
62
DQ2
DQ13
6
61
VSSQ
VDDQ
MEM_DQ12
7
60
DQ3
DQ12
MEM_DQ11
8
59
DQ4
DQ11
9
58
VDDQ
VSSQ
MEM_DQ10
10
57
DQ5
DQ10
MEM_DQ9
11
56
DQ6
DQ9
12
55
VSSQ
VDDQ
MEM_DQ8
13
54
DQ7
DQ8
14
53
NC
NC
15
52
VDDQ
VSSQ
MEM_DQS1
MEM_VREF
16
51
LDQS
UDQS
17
50
NC
NC
MEM_VREF
18
49
VDD
VREF
19
48
NC
VSS
20
47
MEM_DQM1
LDM
UDM
MEM_CLK0#
CD1
CD1
21
46
WE
CLK
MEM_CLK0
22
45
0.1uF
0.1uF
CAS
CLK
MEM_CLKEN
23
44
RAS
CKE
24
43
CS
NC
MEM_ADDR12
25
42
NC
A12
MEM_ADDR11
26
41
BS0
A11
MEM_ADDR9
27
40
BS1
A9
28
39
MEM_ADDR8
A10/AP
A8
MEM_ADDR7
29
38
A0
A7
MEM_ADDR6
30
37
A1
A6
MEM_ADDR5
31
36
A2
A5
MEM_ADDR4
32
35
A3
A4
33
34
VDD
VSS
16M x 16 DDR TSOP-66
16M x 16 DDR TSOP-66
R-TSOP66N-0.650-11.84-HX
R-TSOP66N-0.650-11.84-HX
DDR1
CD6
CD6
CD7
CD7
CD8
CD8
CD9
CD9
CD10
CD10
CD11
CD11
CD12
CD12
100uF/16v
100uF/16v
4.7uF/10V
4.7uF/10V
0.1uF
0.1uF
0.1uF
0.1uF
0.1uF
0.1uF
0.1uF
0.1uF
3300pF
3300pF
LP2996 for Vref and VTT of DDR1
VTT
+
+
CD34
CD34
CD27
CD27
CD30
CD30
100uF/16v
100uF/16v
10uF/10v
10uF/10v
0.01uF
0.01uF
RD9
RD9
U2
U2
DDRV
VTT
1
GND
MEM_VREF
2
RA140
RA140
SD
3
1K 1%/NS
1K 1%/NS
VSENSE
MEM_VREF
4
VREF
IC LP2996 DDR Termination SOP-8
IC LP2996 DDR Termination SOP-8
C680
C680
R-SOIC08N-1.270-6.00-HX
R-SOIC08N-1.270-6.00-HX
RA141
RA141
CD28
CD28
1K 1%/NS
1K 1%/NS
0.01uF
0.01uF
1uF
1uF
2008/05/08 MODIFY
4
3
增加FB31
20080911
FB31
FB31
0603/181
0603/181
CD32
CD32
4.7uF/10v
4.7uF/10v
add in 2008/06/02
+
+
CD35
CD35
CD33
CD33
100uF/16v
100uF/16v
4.7uF/10v
4.7uF/10v
2008.6.4
CD13
CD13
CD14
CD14
CD15
CD15
3300pF
3300pF
3300pF
3300pF
3300pF
3300pF
CD31
CD31
4.7uF/10v
4.7uF/10v
增加磁珠
DDRV
20080911
4.7K
4.7K
FB30
FB30
0603/181
0603/181
8
VTT
7
PVIN
6
AVIN
5
VDDQ
+
+
CD36
CD36
CD37
CD37
100uF/16v
100uF/16v
0.1uF
0.1uF
3
2
VTT
RND10
RND10
MEM_DQ0
RND1
RND1
RDQ0
5
4
5
4
6
3
MEM_DQ1
6
3
RDQ1
MEM_DQ2
RDQ2
7
2
7
2
CD17
CD17
MEM_DQ3
RDQ3
8
1
8
1
150x4
150x4
22x4
22x4
0.1uF
0.1uF
R-RESCA3216-8N-HX
R-RESCA3216-8N-HX
R-RESCA2010-8N-HX
R-RESCA2010-8N-HX
RND11
RND11
MEM_DQ4
RND2
RND2
RDQ4
5
4
5
4
MEM_DQ5
RDQ5
6
3
6
3
7
2
MEM_DQ6
7
2
RDQ6
CD18
CD18
MEM_DQ7
RDQ7
8
1
8
1
150x4
150x4
22x4
22x4
3300pF
3300pF
R-RESCA3216-8N-HX
R-RESCA3216-8N-HX
R-RESCA2010-8N-HX
R-RESCA2010-8N-HX
150
150
RD10
RD10
MEM_DQS0
22
22
RD1
RD1
RDQS0
150
150
RD11
RD11
MEM_DQM0
22
22
RD2
RD2
RDQM0
150
150
RD12
RD12
MEM_DQM1
22
22
RD3
RD3
RDQM1
CD19
CD19
150
150
RD13
RD13
MEM_DQS1
22
22
RD4
RD4
RDQS1
0.1uF
0.1uF
RND13
RND13
MEM_DQ8
RND3
RND3
RDQ8
5
4
5
4
MEM_DQ9
RDQ9
6
3
6
3
7
2
MEM_DQ10
7
2
RDQ10
CD21
CD21
MEM_DQ11
RDQ11
8
1
8
1
150x4
150x4
22x4
22x4
3300pF
3300pF
R-RESCA3216-8N-HX
R-RESCA3216-8N-HX
R-RESCA2010-8N-HX
R-RESCA2010-8N-HX
RND14
RND14
MEM_DQ12
RND4
RND4
RDQ12
5
4
5
4
MEM_DQ13
RDQ13
6
3
6
3
MEM_DQ14
RDQ14
7
2
7
2
CD20
CD20
8
1
MEM_DQ15
8
1
RDQ15
150x4
150x4
22x4
22x4
0.1uF
0.1uF
R-RESCA3216-8N-HX
R-RESCA3216-8N-HX
R-RESCA2010-8N-HX
R-RESCA2010-8N-HX
RND15
RND15
MEM_WE#
RND5
RND5
RWE#
5
4
5
4
MEM_CAS#
RCAS#
6
3
6
3
MEM_RAS#
RRAS#
7
2
7
2
CD22
CD22
8
1
8
1
150x4
150x4
22x4
22x4
3300pF
3300pF
R-RESCA3216-8N-HX
R-RESCA3216-8N-HX
R-RESCA2010-8N-HX
R-RESCA2010-8N-HX
5
RND16
RND16
4
MEM_CS#
5
RND6
RND6
4
RCS#
MEM_BA0
RBA0
6
3
6
3
MEM_BA1
RBA1
7
2
7
2
CD23
CD23
MEM_ADDR10
RA10
8
1
8
1
150x4
150x4
22x4
22x4
0.1uF
0.1uF
R-RESCA3216-8N-HX
R-RESCA3216-8N-HX
R-RESCA2010-8N-HX
R-RESCA2010-8N-HX
RND17
RND17
MEM_ADDR4
RND7
RND7
RA4
5
4
4
5
6
3
MEM_ADDR5
3
6
RA5
MEM_ADDR6
RA6
7
2
2
7
CD25
CD25
MEM_ADDR7
RA7
8
1
1
8
3300pF
3300pF
150x4
150x4
22x4
22x4
R-RESCA3216-8N-HX
R-RESCA3216-8N-HX
R-RESCA2010-8N-HX
R-RESCA2010-8N-HX
RND18
RND18
MEM_ADDR12
RND8
RND8
RA12
4
5
5
4
MEM_ADDR11
RA11
3
6
6
3
MEM_ADDR9
RA9
2
7
7
2
CD24
CD24
MEM_ADDR8
RA8
1
8
8
1
150x4
150x4
22x4
22x4
0.1uF
0.1uF
R-RESCA3216-8N-HX
R-RESCA3216-8N-HX
R-RESCA2010-8N-HX
R-RESCA2010-8N-HX
RND19
RND19
MEM_ADDR0
RND9
RND9
RA0
5
4
5
4
6
3
MEM_ADDR1
6
3
RA1
MEM_ADDR2
RA2
7
2
7
2
CD26
CD26
MEM_ADDR3
RA3
8
1
8
1
150x4
150x4
22x4
22x4
3300pF
3300pF
R-RESCA3216-8N-HX
R-RESCA3216-8N-HX
R-RESCA2010-8N-HX
R-RESCA2010-8N-HX
MEM_CLK0
RD6
RD6
22
22
RCLK0
RD7
RD7
100
100
If use SDRAM NC RD7/RD8
MEM_CLK0#
RD8
RD8
22
22
RCLK0#
MEM_CLKEN
RD5
RD5
22
22
RCKE
MediaTek (ShenZhen) Inc.
MediaTek (ShenZhen) Inc.
MediaTek (ShenZhen) Inc.
Title
Title
Title
Size
Size
Size
C
C
C
Date:
Date:
Date:
2
1
RDQS0
RDQS0 3
RDQS1
RDQS1 3
RDQM0
RDQM0 3
RDQM1
RDQM1 3
RWE#
RWE#
3
RCAS#
RCAS# 3
RRAS#
RRAS# 3
RCS#
RCS#
3
RCKE
RCKE
3
RDQ[15..0]
RDQ[15..0] 3
RA[12..0]
RA[12..0] 3
D
RCLK0
RCLK0
3
RCLK0#
RCLK0# 3
RBA0
RBA0
3
RBA1
RBA1
3
MEM_VREF
MEM_VREF 3
DDRV
DDRV
2,3,4
GND
GND
2,3,4,6,7,8,9,10,11,12,13,14
C
B
A
MediaTek Confidential
MediaTek Confidential
MediaTek Confidential
DDR1 DRAM
Rev
Rev
Rev
Document Number
Document Number
Document Number
Drawn:
Drawn:
Drawn:
1
1
1
Jiu.Ni
2008/1/25
Sheet
Sheet
Sheet
5
5
5
of
of
of
14
14
14
1

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